Gallium Nitride (GaN) properties are quite different from silicon. Early on in the technology, devices made with GaN were depletion mode devices (on at zero gate voltage and needed a negative voltage to turn the device off). Enhancement (off at zero gate voltage) mode devices are now available. GaN’s advantage are smaller physical size for the same current and voltages as silicon, lower conduction losses, higher operating temperatures and much faster switching times, which reduces switching losses. Here’s a link to a company that produces GaN devices and modules. Two of my former colleagues currently work here.
Efficient Power Conversion Corporation (EPC) is a leader in Gallium Nitride (GaN) based power management devices. EPC was the first to introduce enhancement mode Gallium Nitride (eGaN) on Silicon transistors for applications such as, wireless power, autonomous vehicles, high-speed mobile...
epc-co.com